Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnOx/Pt and the effect of TiN layer on the improved resistance switching characteristics

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Title
Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnOx/Pt and the effect of TiN layer on the improved resistance switching characteristics
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 520, Issue 6, Pages 2272-2277
Publisher
Elsevier BV
Online
2011-09-30
DOI
10.1016/j.tsf.2011.09.040

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