Journal
THIN SOLID FILMS
Volume 520, Issue 12, Pages 4110-4113Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.04.191
Keywords
Indium tin oxide; APCVD; Chemical vapour deposition; Transparent conductive oxide; Photovoltaics
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We report the deposition of indium tin oxide (ITO) by atmospheric pressure chemical vapour deposition (APCVD). This process is potentially scalable for high throughput, large area production. We utilised a previously unreported precursor combination: dimethylindium acetylacetonate, [Me2In(acac)] and monobutyltintrichloride, MBTC. [Me2In(acac)] is a volatile solid. It is more stable and easier to handle than traditional indium oxide precursors such as pyrophoric trialkylindium compounds. Monobutyltintrichloride (MBTC) is also easily handled and can be readily vaporised. It is compatible with the process conditions required for using [Me2In(acac)]. Cubic ITO was deposited at a substrate temperature of 550 degrees C with growth rates exceeding 15 nm/s and growth efficiencies of between 20 and 30%. Resistivity was 3.5 x 10(-4) Omega cm and transmission for a 200 nm film was >85% with less than 2% haze. (C) 2011 Elsevier B.V. All rights reserved.
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