Journal
THIN SOLID FILMS
Volume 520, Issue 10, Pages 3862-3864Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.10.052
Keywords
Silicon oxynitride; Refractive index; Sputtering; Deposition stability; Thin film
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The deposition stability of silicon oxynitride thin films with intermediate refractive indices was investigated as a function of argon concentration in the process gas mixture. The silicon oxynitride thin films were deposited by pulsed dc reactive magnetron sputtering in a mixture of argon, nitrogen and oxygen. The refractive indices of the silicon oxynitride thin films gradually decreased with oxygen percentage in the reactive gas mixture when high argon concentrations were used. It is proposed that many silicon atoms were sputtered from the target and reached the substrates in high argon concentrations; consequently, drastic oxidation of the thin films did not occur. (C) 2011 Elsevier B.V. All rights reserved.
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