Journal
THIN SOLID FILMS
Volume 525, Issue -, Pages 154-157Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.10.056
Keywords
Thin films; Semiconductors; Oxide; Surface treatment
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Funding
- National Science Council of Taiwan [100-2112-M-018-003-MY3]
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The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation. (C) 2012 Elsevier B.V. All rights reserved.
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