Journal
THIN SOLID FILMS
Volume 520, Issue 7, Pages 2976-2978Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.11.033
Keywords
Phase-change memory; GeSbTe; Phase transition temperature; Thickness dependence
Categories
Funding
- National Science Foundation [ECCS 0925973]
- National Science Council [NSC97-2917-I-182-102]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0925973] Funding Source: National Science Foundation
Ask authors/readers for more resources
The crystallization temperature of GeSbTe thin films with thicknesses between 11 and 87 nm on silicon nitride was studied through resistance versus temperature measurements. The amorphous-cubic phase transition occurs at similar to 150 degrees C for all films thicknesses, whereas the cubic-hexagonal phase transition temperature increases with film thickness, from similar to 200 degrees C for the 20 nm film to similar to 250 degrees C for the 87 nm film. The cubic-hexagonal transition occurs gradually for the 11 nm film. Implications for phase-change memory devices are discussed. (C) 2011 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available