Journal
THIN SOLID FILMS
Volume 519, Issue 12, Pages 4008-4011Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.01.199
Keywords
White photoluminescence; Carbonization; Silicon oxide; STEM; EELS
Categories
Funding
- Japanese Society of Promotion of Science [L-09648]
- Ministry of the Education and Science of Ukraine [F29/368-2009]
- [474]
- Grants-in-Aid for Scientific Research [21360321, 19053004] Funding Source: KAKEN
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Carbon incorporated silicon oxide layers were fabricated by carbonization of porous silicon layer in acetylene atmosphere followed by oxidation in wet argon. The resulting porous SiO2:C material exhibited a strong white photoluminescence. Subsequent thermal treatment in oxygen at 600 degrees C significantly decreased the green-yellow part of photoluminescence band while blue shoulder remained unchanged. Annealing at the same temperature in pure argon did not change light-emission properties indicating that the green-yellow light-emission sites originate from the surface. This study focuses on the interface of silicon oxide matrix and carbon inclusions by high-resolution scanning transmission electron microscopy (STEM) combined with electron energy loss spectroscopy (EELS). It is confirmed by EELS and STEM that the green-yellow emission band is associated with the carbonized interface in the porous layer. (C) 2011 Elsevier B.V. All rights reserved.
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