Influence of Cu diffusion conditions on the switching of Cu–SiO2-based resistive memory devices

Published 2009 View Full Article

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Title
Influence of Cu diffusion conditions on the switching of Cu–SiO2-based resistive memory devices
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 518, Issue 12, Pages 3293-3298
Publisher
Elsevier BV
Online
2009-09-20
DOI
10.1016/j.tsf.2009.09.021

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