Journal
THIN SOLID FILMS
Volume 518, Issue 17, Pages 5028-5031Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.03.163
Keywords
Gallium Nitride; Indium Gallium Nitride; Cathodeluminescence; X-ray Diffraction; Metal-Organic Chemical Vapor Deposition
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Funding
- National Natural Science Fund of China [60976045, 60506001, 60836003, 60776047]
- National Basic Research Program [2007CB936700]
- National Science Foundation for Distinguished Young Scholars [60925017]
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We have investigated the optical properties of thick InGaN film grown on GaN by cathodeluminescence (CL) spectroscopy. It is found that there is obvious In composition variation in both growth and lateral direction of InGaN film. The depth distribution of In composition is closely related to the strain relaxation process of InGaN film. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and the CL peak energy shifts towards red. Moreover, a rather apparent In composition fluctuation is found in the relaxed upper part of InGaN layer as confirmed by CL imaging. (C) 2010 Elsevier B.V. All rights reserved.
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