Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175°C by rf-PECVD

Published 2009 View Full Article

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Title
Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175°C by rf-PECVD
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 518, Issue 9, Pages 2528-2530
Publisher
Elsevier BV
Online
2009-10-15
DOI
10.1016/j.tsf.2009.09.143

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