Journal
THIN SOLID FILMS
Volume 518, Issue 24, Pages 7352-7355Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.04.111
Keywords
Amorphous SiOx; Ti-addition; Resistive switching; Filamentary conduction; RRAM
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Funding
- National Science Council of Taiwan, the Republic of China [NSC 97-2221-E-035-011-MY2, NSC 97-2221-E-007-011]
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Ti-added amorphous SiOx films were sputter-deposited into stacks of Pt/SiOx/Pt and Cu/SiOx/Pt. Optimally prepared Pt/SiOx/Pt exhibits unipolar resistive switching over 10(2) cycles, resistance ratio similar to 10(3), yet wide voltage distribution (2 similar to 7 V for SET, 0.5 similar to 1.5 V for RESET). Cu/SiOx/Pt exhibit similar endurance, resistance ratio up to 10(7), and SET and RESET voltages reduced to 1.8 similar to 4.2 V and 0.5 similar to 1 V. respectively. Cu diffusion into SiOx at the virgin state may play a role in resistive switching of Cu/SiOx/Pt stack besides of filament conduction. Ti-added amorphous SiOx films incorporating Cu electrode shows potential for resistive memory. (C) 2010 Elsevier B.V. All rights reserved.
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