Journal
THIN SOLID FILMS
Volume 517, Issue 17, Pages 5157-5160Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.03.028
Keywords
ZnO; Heterostructure; Thermal annealing; Light-emitting diode; EL; I-V
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Funding
- National Research Foundation of Korea [핵09B3709, R01-2006-000-10027-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report the effects of thermal annealing in air and N-2 ambient on the structural, optical, and electrical properties of zinc oxide (ZnO) films deposited on a p-GaN substrate. Also, we report on the fabrication and device characterization of heterojunction light-emitting diodes based on the n-ZnO/p-GaN systems. In the case of N-2 ambient, room-temperature electroluminescence (EL) in the violet region with peak wavelength 400 nm was observed under forward bias. In air ambient, EL spectrum consisted of a broad band from 400 nm to 700 nm due to the Ga-O mixed region formed interface between the ZnO and GaN layer. (c) 2009 Elsevier B.V. All rights reserved.
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