Realization of high-resistance GaN by controlling the annealing pressure of the nucleation layer in metal-organic chemical vapor deposition

Published 2008 View Full Article

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Title
Realization of high-resistance GaN by controlling the annealing pressure of the nucleation layer in metal-organic chemical vapor deposition
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 517, Issue 2, Pages 588-591
Publisher
Elsevier BV
Online
2008-07-07
DOI
10.1016/j.tsf.2008.06.092

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