Journal
THIN SOLID FILMS
Volume 517, Issue 1, Pages 137-139Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2008.08.062
Keywords
MBE; Silicon; Germanium; Detector; Photodiode; Waveguide
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Funding
- BMBF [01M3170B]
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A near infrared germanium waveguide photodetector for high speed operation is grown monolithically integrated on Si with molecular beam epitaxy (MBE). With a special virtual substrate concept the lattice mismatch between Si and Ge is accommodated. For high speed operation the active device consists of a Ge p-i-n structure with very high-doped contact layers. The challenges on the MBE growth are the abrupt doping transitions over more than 4 orders of magnitudes among p-contact, intrinsic region and the n-contact. (C) 2008 Elsevier B.V. All rights reserved.
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