Article
Engineering, Electrical & Electronic
Pierre Tomasini
Summary: Thermodynamic analysis of Si1-xGex Chemical Vapor Deposition via SiH4 and GeH4 revealed explicit Vapor - Solid distributions after empirical adjustment of the Gibbs Free Energy of reactions. The chemical reaction behind the adjusted values is unclear, but the thermodynamic control of the elemental ratio of the deposited films is demonstrated. Only three numbers are needed for full knowledge of a distribution, highlighting the importance of the Gibbs Free Energy of reactions and the regular solution interaction parameter.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Chemistry, Multidisciplinary
Dong-Bum Seo, Sung-Su Bae, Eui-Tae Kim
Summary: Efficient visible-light photocatalysis was achieved by synthesizing TiO2-delta nanobelts with abundant surface states and self-doping carbon atoms under judicious growth conditions, demonstrating the effective utilization of large surface area and high concentration of surface states in a wide range of photocatalysis applications.
Article
Biochemistry & Molecular Biology
Liangzhu Zhu, Anil V. Virkar
Summary: Sodium ion batteries have potential applications in large-scale grid energy storage and renewable energy generation due to their low cost and high energy density. This study focuses on the synthesis and characterization of a Na-beta ''-Alumina + YSZ composite electrolyte, which shows higher mechanical strength and stability compared to conventional materials. The results indicate promising applications in solid state or molten salt batteries at low to intermediate temperatures.
Article
Chemistry, Physical
Q. N. Abdullah, A. R. Ahmed, A. M. Ali, F. K. Yam, Z. Hassan, M. Bououdina
Summary: Nanostructured beta-Ga2O3 nanobelts were successfully fabricated using a thermal evaporation method, and a sol-gel processed SnO2 layer was deposited to modify the functionality of gallium oxide. The sensing characteristics of SnO2-functionalized beta-Ga2O3 nanobelts towards analyte gas H2 were found to be greatly improved within a certain concentration range.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2021)
Article
Materials Science, Multidisciplinary
Jiang-hao Qiao, Kun Chen, Song-jiang Li, Yan-cai Liu, Hong-wei Cao, Guo Wei, Li-ping Kong, Xin Zhang, Hong-tao Liu
Summary: The study successfully fabricated Bi2O3 film on aluminum foil using PS-CVD technology, demonstrating a tree coral-like dendritic morphology and good repetition performance. It opens up the possibility of utilizing atmospheric plasma spraying for the preparation of semiconductor nano oxide coating.
Article
Nanoscience & Nanotechnology
Tao Zhang, Qian Cheng, Yifan Li, Zhiguo Hu, Jinbang Ma, Yixin Yao, Yuxuan Zhang, Yan Zuo, Qian Feng, Yachao Zhang, Hong Zhou, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao
Summary: In this study, beta-Ga2O3 films were deposited on (-201) homo-substrates using MOCVD method. It was found that the Ga source flow rate significantly influenced the surface morphology, and a relatively flat surface was obtained with appropriate TEGa and O-2 flow rates. The substrate morphology can be greatly improved by cleaning and thermal annealing, which promotes the surface flatness of the epilayer. Insertion of a buffer layer and optimization of growth conditions also contribute to achieving a higher surface flatness.
SCRIPTA MATERIALIA
(2022)
Article
Materials Science, Ceramics
Tao Zhang, Yifan Li, Qian Cheng, Zhiguo Hu, Jinbang Ma, Yixin Yao, Yan Zuo, Qian Feng, Yachao Zhang, Hong Zhou, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao
Summary: In this study, β-Ga2O3 films were successfully deposited on sapphire substrates using pulsed MOCVD, and the effects of different O-2 pulse times on the growth and properties were investigated. The results showed that the film deposited with a 0.2-minute O-2 pulse had the best crystalline quality and stable photoelectric performance.
CERAMICS INTERNATIONAL
(2022)
Article
Materials Science, Multidisciplinary
Mrad Mrad, Yann Mazel, Guy Feuillet, Matthew Charles
Summary: In this study, the problem of gallium pollution in the InAlN layer is addressed by examining changes to process conditions. Using a model that combines GaN decomposition, gallium desorption, and diffusion, different process conditions are tested to limit desorption or diffusion. The results show that reducing the growth temperature and increasing the wafer-showerhead distance can both effectively reduce gallium pollution. Additionally, using AlGaN layers as the channel eliminates gallium pollution even at low compositions.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Chemistry, Inorganic & Nuclear
Pengxue Zhang, Yan Sui, Weijing Ma, Nannan Duan, Qi Liu, Bingmiao Zhang, Haijun Niu, Chuanli Qin
Summary: Researchers have successfully synthesized a Ti3C2Tx/MoO3-x/PEDOT:PSS (TMP) free-standing film structure by introducing oxygen vacancy-enriched molybdenum trioxide (MoO3-x) as an intercalator and PEDOT with high electronic conductivity as a co-intercalator and conductive binder. This film structure can effectively improve the self-stacking problem of Ti3C2Tx and enhance its electrochemical performance.
DALTON TRANSACTIONS
(2023)
Article
Thermodynamics
Omar Dhannoon Jumaah, Yogesh Jaluria
Summary: Chemical vapor deposition (CVD) is widely used for obtaining thin films of materials like silicon, silicon carbide, graphene, and gallium nitride. The quality of the thin films, particularly gallium nitride (GaN), is crucial for the reliability and durability of electronic and optical devices. The composition of the precursor and the carrier gases play a significant role in determining the deposition rate and uniformity of the films, with trimethylgallium (TMG) flow rate and hydrogen/nitrogen gas mixture being key factors in improving the quality of GaN thin films.
JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME
(2021)
Article
Crystallography
Chang-Hun Song, Minwoo Kong, Hyunchul Jang, Sang Tae Lee, Hyeong-Ho Park, Donghyun Kim, Keunman Song, Dae-Hong Ko, Chan-Soo Shin
Summary: This paper investigates the growth morphology changes of Te-doped InAs nanowires grown on InP substrates, showing that increased Te flow rate suppresses vertical growth while enhancing lateral growth, and leads to the evolution of sidewall planes from (11 over bar 0) to a reverse-tapered morphology.
Article
Energy & Fuels
Cheng Niu, Chang Wang, Gaojie Zhang, Qianqian Zhao, Cheng Fang, Wangnan Li, Fuzhi Huang, Zhiliang Ku, Yi-bing Cheng
Summary: Despite progress in efficiency and stability, scalability and reproducibility remain challenges for perovskite solar cells. Controllable halogen exchange in the vapor-solid reaction process is crucial for further development of this technique. Introducing alkali-metal ions for regulating the exchange has led to high-quality perovskite films and significant enhancement in solar cell performance.
Article
Engineering, Electrical & Electronic
Yan Guo, Xinxu Zhang, Rui Zhang, Aiyuan Li, Jiawen Zhang, Hui He
Summary: In this study, Bi2O3 and Bi2S3 nanomaterials were modified with polyvinylpyrrolidone (PVP) to form Bi2O3@PVP and Bi2S3@PVP. The addition of PVP reduced the size of Bi2O3 and Bi2S3 nanomaterials, changed the structure of Bi2O3, and induced reduction of trivalent Bi3+. PVP improved the capacitive performance and cyclic stability of both Bi2O3 and Bi2S3 through supporting their structural stability, reducing their size, and facilitating electron transfer and ion diffusion.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Chemistry, Physical
Sumit Kumar, Frederic Fossard, Gaelle Amiri, Jean-Michel Chauveau, Vincent Sallet
Summary: The study investigates the growth mechanisms and induced structural modifications in ZnS nanowires by changing the physical state of the catalyst droplet. The results show the first observation of the 15R crystal polymorph in nanowires grown via liquid alloyed catalyst, while those grown via solid catalyst exhibit crystal polytypes of zinc blende and wurtzite. The role of cohesive energies in the formation of these ZnS polytypes is calculated and discussed, along with the selection rules for the crystallization of the 15R structure in nanowires and the growth mechanisms involved.
Article
Optics
Tao Zhang, Zhiguo Hu, Yifan Li, Yachao Zhang, Qian Feng, Jing Ning, Chunfu Zhang, Jincheng Zhang, Yue Hao
Summary: In this study, beta-Ga2O3 films were deposited on off-angled substrates by low pressure MOCVD, showing that the grain size and growth rate of the film decrease with increasing growth pressure, leading to weakening of photoluminescence intensity.
JOURNAL OF LUMINESCENCE
(2021)
