Journal
THIN SOLID FILMS
Volume 516, Issue 12, Pages 3924-3930Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2007.07.173
Keywords
copper(I) precursors; chemical vapor deposition; electrical conductivity; microstructural properties; copper layers; surface analysis
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Copper thin layers were deposited on Si(Ill) and glass substrates by chemical vapor deposition method using [Cu(OOCC2F5)(L)], L=vinyltrimethylsilane (1), vinyltriethylsilane (2) as precursors. Application of multistage depositions of Cu films on a glass surfaces resulted in formation of the metallic membranes. Fabricated crystalline copper layers, which contains some carbon (5-9%) and oxygen (1-5%) impurities, have been characterized by grazing incidence X-ray diffraction and X-ray photoelectron methods. The morphology studies exhibited metallic layers composed of copper grains, their size and packed density depends on deposition parameters. Electrical properties of metallic films were studied by four-point probe, as a function of temperature in 103-333 K range. (c) 2007 Elsevier B.V. All rights reserved.
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