Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric

Published 2007 View Full Article

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Title
Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 516, Issue 5, Pages 770-772
Publisher
Elsevier BV
Online
2007-07-06
DOI
10.1016/j.tsf.2007.06.048

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