Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system

Published 2007 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH4/CH4/H2 system
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 516, Issue 5, Pages 633-636
Publisher
Elsevier BV
Online
2007-06-16
DOI
10.1016/j.tsf.2007.06.065

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.