4.4 Article Proceedings Paper

Study of pore reorganisation during annealing of macroporous silicon structures for solar cell application

Journal

THIN SOLID FILMS
Volume 516, Issue 20, Pages 6934-6938

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2007.12.041

Keywords

macroporous silicon; silicon dioxide; argon anneal; silicon surface migration; structural change; void; thin-film silicon solar cell

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Thin layers of silicon for solar cells can be lifted-off from wafers by taking advantage of the property of macropores to reorganise at high temperature and, in specific conditions, to form a high-quality layer on top of an empty space. Those conditions need to be identified and this work focuses in particular on the annealing ambient composition. Its influence was investigated by scanning and transmission electron microscopy and by Fourier-transform infrared spectroscopy. Apart from hydrogen, which has been used in previous studies, argon was found to be also compatible with the reorganisation. This result points out that the presence of oxygen impurities may not be as deleterious as expected, but that those impurities complicate the set of reactions taking place during the high-temperature process. (C) 2007 Elsevier B.V. All rights reserved.

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