Journal
SYNTHETIC METALS
Volume 162, Issue 7-8, Pages 598-604Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2012.01.020
Keywords
Organic field-effect transistors; Polymer gate dielectrics; Cross-linking reaction; Organic semiconductors; Organic complementary inverter
Funding
- National Research Foundation (NRF) [2009-0089650]
- Seoul RBD Program [WR090671]
- National Research Foundation of Korea [2009-0089650] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Four poly(4-vinyl phenol) based gate dielectrics were tested to optimize the performance of pentacene organic field-effect transistors. The dielectrics' surface tensions, Fourier transform infrared spectra, capacitances and leakage currents were measured. The optimal dielectric allowed the transistor to show negligible hysteresis with high performance even in ambient conditions. A complementary inverter was fabricated by integrating in single substrate pentacene (p-type) and F16CuPc (n-type) OFETs containing the optimized gate dielectric. Its voltage transfer curve showed almost symmetric noise margin; it showed a logic threshold of 22.5 V and a maximum voltage gain (delta V-out/delta V-in) of 6.2 at V-in = 22.5 V. (C) 2012 Elsevier B.V. All rights reserved.
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