Journal
SYNTHETIC METALS
Volume 160, Issue 5-6, Pages 504-509Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2009.11.039
Keywords
Organic field-effect transistors; Gate dielectric; Surface properties; Organic semiconductor
Funding
- Ministry of Knowledge Economy and National Research Foundation (NRF) [R71-2008-052-03003]
- Seoul RBD Program [WR090671]
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We report a copper hexadecafluorophthalocyanine (F16CuPc) based n-type organic field-effect transistor (OFET) with polymeric gate dielectrics with different physical/electrical properties. The gate dielectrics are four types of cross-linked poly(4-vinylphenol) and newly prepared poly(4-phenoxy methyl styrene) and those are characterized based on surface tension, leakage current and capacitance. The performance of F16CUPc OFETs with those gate dielectrics was compared. We found that the composition of the gate dielectrics and the interfacial interaction of F16CUPc with the gate dielectric play a decisive role in the performance of OFETs. The effect of physical/electrical properties, composition and processing condition of the gate dielectrics on the device performance was investigated. (C) 2009 Elsevier B.V. All rights reserved.
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