Journal
SYNTHETIC METALS
Volume 160, Issue 23-24, Pages 2501-2504Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2010.09.034
Keywords
Pulsed laser evaporation; Polyfluorene; Field-effect transistor; Metal-insulator-semiconductor
Funding
- National Science Foundation [ECCS-0823563]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0823563] Funding Source: National Science Foundation
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Matrix assisted pulsed laser evaporation (MAPLE) allows homogeneous film coverage of organic materials for layer-by-layer growth providing a tighter control of the polymer-dielectric interface in field-effect transistors (FETs) and metal-insulator-semiconductor (MIS) diodes. Electrical characteristics of FETs and MIS diodes using MAPLE and spin-coated grown fluorene copolymer films are compared. Current-voltage characteristics of MAPLE grown FETs without any surface modification show a better performance compared to the spin-coated FETs. Capacitance-voltage and conductance-voltage investigations of the MIS structures show that loss as well as accumulation capacitance and time constant dispersions are less in the MAPLE grown film compared to the spin-coated film. (C) 2010 Elsevier B.V. All rights reserved.
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