N2-plasma nitridation on Si(111): Its effect on crystalline silicon nitride growth

This study uses a combination of atom-resolved scanning tunneling microscopic and spectroscopic (STM/STS) techniques to investigate the effects of N-2-plasma nitridation on a crystalline beta-Si3N4 ultrathin film grown on the Si(111) substrate. The proposed two-step growth process, including N-2-plasma nitridation followed by vacuum annealing both at high temperature (similar to 900 degrees C), can substantially improve the atomic and electronic structures of the beta-Si3N4 having an atomically uniform morphology and stoichiometry. The effects of nitridation and post-annealing temperatures were examined by monitoring the morphological and electronic-structural evolutions of a non-stoichiometric surface. Moreover, the two-step N-2-plasma nitridation process has extremely low activation energy and thus minimizes the thermal energy from the substrate for practical growth of beta-Si3N4 ultrathin film. (C) 2012 Elsevier B.V. All rights reserved.