Journal
SURFACE SCIENCE
Volume 604, Issue 21-22, Pages 2024-2030Publisher
ELSEVIER
DOI: 10.1016/j.susc.2010.08.016
Keywords
Pulsed electron beam deposition (PED); Zinc oxide; Pole figure; Resistivity; Tauc plot
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In this work, the pulsed electron beam deposition method (PED) is evaluated by studying the properties of ZnO thin films grown on c-cut sapphire substrates. The film composition, structure and surface morphology were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction and atomic force microscopy. Optical absorption, resistivity and Hall effect measurements were performed in order to obtain the optical and electronic properties of the ZnO films. By a fine tuning of the deposition conditions, smooth, dense, stoichiometric and textured hexagonal ZnO films were epitaxially grown on (0001) sapphire at 700 degrees C with a 30 degrees rotation of the ZnO basal plane with respect to the sapphire substrate. The average transmittance of the films reaches 90% in the visible range with an optical band gap of 3.28 eV. Electrical characterization reveals a high density of charge carrier of 3.4 x 10(19) cm(-3) along with a mobility of 11.53 cm(2)/Vs. The electrical and optical properties are discussed and compared to ZnO thin films prepared by the similar and most well-known pulsed laser deposition method. (C) 2010 Elsevier B.V. All rights reserved.
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