Journal
SURFACE AND INTERFACE ANALYSIS
Volume 43, Issue 5, Pages 865-868Publisher
WILEY-BLACKWELL
DOI: 10.1002/sia.3647
Keywords
high-k gate dielectrics; chemical vapor deposition; Fourier transform infrared spectroscopy; electrical properties
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Funding
- National Natural science Foundation of China [10804109]
- Royal Society UK [IJP-2006/R1]
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Hf1-xSixO2 gate dielectrics grown by UV-photo-induced chemical vapor deposition (UV-CVD) using Hf(OBut)(2)(mmp)(2) and tetraethoxysilane as precursors have been deposited on Si substrate. Composition dependence of the interfacial microstructure of the Hf1-xSixO2/Si gate stacks has been investigated via Fourier transform infrared spectroscopy (FTIR) systematically. It has been indicated that the physical properties of the Hf1-xSixO2 films can be effectively optimized by adjusting the silicon contents incorporated in the films. In order to evaluate its potential implementation as an alternative dielectric in future devices, detailed electrical characterization of Au/Hf1-xSixO2/Si capacitor has been performed as functions of the silicon contents and the UV-annealing time. Copyright (C) 2010 John Wiley & Sons, Ltd.
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