Article
Chemistry, Multidisciplinary
Weixi Wang, Eric Ngo, Pavel Bulkin, Zhengyu Zhang, Martin Foldyna, Pere Roca i Cabarrocas, Erik V. Johnson, Jean-Luc Maurice
Summary: We report the growth of silicon nanowires (SiNWs) using a novel Cu-In bimetallic catalyst and plasma-enhanced chemical vapor deposition (PECVD). The structure of the catalyst nanoparticles (NPs) is studied throughout a two-step process involving a hydrogen plasma pre-treatment and SiNW growth. The results show that the plasma treatment induces a coalescence of the Cu-rich cores of the NPs and the SiNW growth process induces a phase transformation of the catalyst cores.
Article
Chemistry, Physical
Wipakorn Jevasuwan, Mostafa Abdelbar, Bernice Mae Yu Jeco-Espaldon, Mohammed Abdelhameed, Hassanet Sodabanlu, Qinqiang Zhang, Yoshitaka Okada, Naoki Fukata
Summary: In order to achieve low-cost and flexible solar cells, researchers have successfully grown aluminum-catalyzed silicon nanowires on thin silicon wafers, minimizing interfacial defects and light absorption loss. They have also fabricated thin silicon nanowire solar cells using manganese-doped cesium lead chloride perovskite nanocrystals, achieving an enhanced power conversion efficiency of up to 9%.
ACS APPLIED ENERGY MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
M. Kamruzzaman, J. A. Zapien
Summary: ZnO nanorod arrays (NRAs) have potential applications as building blocks for nanoscale electronic, optoelectronic, and sensing applications. The density of ZnO NRAs can be controlled by a simple low-cost hydrothermal growth process. The wettability of ZnO NRAs is shown to have a large dependence on density.
NANOSCALE ADVANCES
(2023)
Article
Chemistry, Multidisciplinary
Syed M. N. Hasan, Weicheng You, Arnob Ghosh, Sharif Md. Sadaf, Shamsul Arafin
Summary: This work presents the selective area epitaxy of GaN nanostructures grown on Ga-polar GaN/sapphire substrates by plasma-assisted molecular beam epitaxy. Three types of nanostructures, namely nanowires, nanofins, and nanorings, are demonstrated on GaN-on-sapphire templates, with investigation on the control of their morphology and orientation. This study advances the understanding of selective area epitaxy for defining complex III-nitride nanostructures, which are important in the fields of nanotechnology and nanoscience.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Nanoscience & Nanotechnology
Ruiling Gong, Edy Azrak, Celia Castro, Sebastien Duguay, Philippe Pareige, Pere Roca i Cabarrocas, Wanghua Chen
Summary: Alloying Ge with Sn is a promising way for Si compatible optoelectronics. GeSn nanowires were successfully synthesized via nano-crystallization of a hydrogenated amorphous Ge layer with metal Sn droplets, with different morphologies obtained by changing process conditions. Annealing under Ar plasma favors the elaboration of straight GeSn NWs, while the synthesis of out-of-plane GeSn NWs has been demonstrated by reversing the deposition sequence.
Article
Engineering, Electrical & Electronic
Leonid Mochalov, Alexander Logunov, Igor Prokhorov, Maksim Vshivtsev, Mikhail Kudryashov, Yulia Kudryashova, Vladimir Malyshev, Yulia Spivak, Evgeny Greshnyakov, Alexander Knyazev, Diana Fukina, Pavel Yunin, Vyacheslav Moshnikov
Summary: In this study, zinc oxide nanostructures with different compositions and morphologies were prepared using the PECVD technique. The plasma process mechanisms, stoichiometry, and structural characteristics of the zinc oxide nanostructures under different plasma reaction conditions were investigated.
OPTICAL AND QUANTUM ELECTRONICS
(2022)
Article
Nanoscience & Nanotechnology
Kai Yang, Nathalie Coulon, Anne Claire Salaun, Laurent Pichon
Summary: The synthesis of silicon nanowires under pure hydrogen plasma using indium as a catalyst resulted in the growth of smooth surface nanowire arrays with specific diameters and lengths. Prolonged exposure to hydrogen plasma led to the growth of nanowires with larger diameters and rougher surfaces, indicating the onset of secondary nanowire growth likely due to indium residues. This study presents a new procedure for the 3D solid-liquid-solid growth mode of SiNWs.
Article
Chemistry, Multidisciplinary
Tatyana Sergeevna Sazanova, Leonid Alexandrovich Mochalov, Alexander Alexandrovich Logunov, Mikhail Alexandrovich Kudryashov, Diana Georgievna Fukina, Maksim Anatolevich Vshivtsev, Igor Olegovich Prokhorov, Pavel Andreevich Yunin, Kirill Alexandrovich Smorodin, Artem Anatolevich Atlaskin, Andrey Vladimirovich Vorotyntsev
Summary: Zinc oxide nanoparticles were synthesized using plasma-enhanced chemical vapor deposition (PECVD) and their size, morphology, and structural properties were studied. The zinc source temperature and reactor temperature were found to affect the shape and size of the nanoparticles.
Article
Chemistry, Multidisciplinary
Chenguang Xin, Changjiang Fan, Zhongyao Zhang, Yanru Zhou
Summary: In this study, we demonstrate the growth of optical waveguiding CdTe nano-/microwires via chemical vapor deposition. By controlling the growth parameters, we are able to tailor the architecture and crystallographic phases of the nano-/microwires. Dislocation-driven growth of CdTe nano-/microwires is observed for the first time. These nano-/microwires exhibit excellent single-crystal structure and waveguiding properties, showing great potential for applications in waveguiding and nonlinear optics.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Chemistry, Multidisciplinary
Zhina Razaghi, Dong Yue Xie, Ming-hui Lin, Guo-zhen Zhu
Summary: Ion beam irradiation can manipulate the composition and shape of nanowires by causing crystal defects and volume expansions. The bending effect is observed in nanowires with different diameters, but remains largely unknown in nanowires with complex shapes influenced by non-uniform irradiation. Investigating TiO2 nanowires with bead-like and prismatic shapes under a Ga+ ion beam reveals significant bending only in prismatic nanowires, which can be reversed by changing the ion beam direction. This finding suggests that ion irradiation can be used to tailor the composition and morphology of nanowires at the nanoscale.
Article
Chemistry, Physical
Yu-Chen Deng, Nan-Long Zhang, Qiang Zhi, Bo Wang, Jian-Feng Yang
Summary: Dense SiC ceramics were fabricated using SiC nanoarrays as crystal seeds in a HTPVT growth process, achieving high density, large grain size, high hardness, high flexural strength, and good thermal conductivity.
Article
Energy & Fuels
Audrey Morisset, Raphael Cabal, Valentin Giglia, Adrien Boulineau, Eric De Vito, Amal Chabli, Sebastien Dubois, Jose Alvarez, Jean-Paul Kleider
Summary: By depositing a B-rich dielectric layer and annealing it, an excellent surface passivation has been achieved with the externally doped poly-Si(B) contact, showing good quality. Gradual filling of the poly-Si layer with active B dopants with increasing annealing temperature strengthens field-effect passivation and increases open-circuit voltage after annealing to 800 degrees C.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2021)
Article
Chemistry, Multidisciplinary
Yinzi Cheng, Xin Gan, Zongguang Liu, Junzhuan Wang, Jun Xu, Kunji Chen, Linwei Yu
Summary: This study presents the fabrication of highly uniform indium catalyst droplets using a nanostripe-confined approach, which enables the uniform growth of an orderly array of silicon nanowires (SiNWs) via in-plane solid-liquid-solid (IPSLS) growth directed by step edges. The improved droplet uniformity translates into a more uniform growth of ultrathin SiNWs, providing a solid basis for the development of advanced SiNW-derived field-effect transistors, sensors, and display applications.
Article
Chemistry, Physical
Krystyna Mika, Ewelina Wiercigroch, Marcin Pisarek, Marcin Koziel, Dorota Majda, Anton S. Lytvynenko, Grzegorz D. Sulka, Leszek Zaraska
Summary: This study demonstrates the electrochemical generation of nanowire arrays via one-step anodic oxidation of Zn in carbonate-based electrolytes with different pH values. The morphology of the anodic films was characterized, and the composition of the nanomaterials was analyzed using various techniques. The formation of a previously unknown phase of zinc carbonate and the generation of ZnO were observed during the anodization process. The changes occurring during thermal treatment and the photoelectrochemical performance of the ZnO nanostructures were also investigated.
APPLIED SURFACE SCIENCE
(2023)
Article
Optics
Li-Yang Sunny Chang, Steve Pappert, Paul K. L. Yu
Summary: The thermo-optic coefficient (TOC) of silicon-rich amorphous silicon carbide (a-SiC) thin film deposited by plasma-enhanced chemical vapor deposition (PECVD) was characterized in this work. It was found that the TOC increases with the silicon content of the film. The TOC showed a more than threefold improvement, reaching a value as high as 1.88 x 10-4 degrees C-1, comparable to crystalline silicon. An efficient thermo-optic phase shifter was demonstrated by integrating the silicon-rich a-SiC micro-ring structure with a NiCr heater, achieving a tunability of 0.117 nm/mW and a tuning efficiency P pi as low as 4.2 mW at an optical wavelength of 1550 nm. These findings suggest silicon-rich a-SiC as a promising material for thermo-optic applications in photonic integrated circuits.
Review
Engineering, Multidisciplinary
Michael Raj Marks, Kuan Yew Cheong, Zainuriah Hassan
Summary: This article reviews the physics of laser-material interaction in Si wafer dicing, discussing the effects of laser settings, dicing parameters, and material factors on ablation rate and quality, as well as approaches to improve cutting methods.
PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY
(2022)
Article
Physics, Condensed Matter
M. A. A. Z. Md Sahar, Z. Hassan, S. S. Ng, N. A. Hamzah, Y. Yusuf, N. N. Novikova, V. A. Yakovlev, S. A. Klimin
Summary: This study demonstrates the growth transition of AlN films from 3D to 2D on a sapphire substrate at different temperatures using MOCVD. The results show that as the temperature increases, the AlN film exhibits a smoother surface and higher crystal quality. The film grown at 1100℃ in the Frank-van der Merwe or 2D growth mode has the highest crystalline quality.
SUPERLATTICES AND MICROSTRUCTURES
(2022)
Article
Materials Science, Multidisciplinary
Puteri Haslinda Megat Abdul Hedei, Zainuriah Hassan, Hock Jin Quah
Summary: The study systematically investigated the effects of post-deposition annealing at different temperatures on polycrystalline gallium oxide films, showing improvements in structural, morphological, optical, and electrical characteristics as temperature increased up to a certain point. However, excessive annealing temperature resulted in detrimental effects such as interfacial layer formation due to excessive oxygen anion diffusion and sudden contraction of indirect band gap, suggesting that 1000 degrees C was not a suitable annealing temperature for Ga2O3 films. An optimized annealing temperature of 800 degrees C demonstrated the best leakage current density characteristic due to improved crystallinity and the smallest FWHM.
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
(2022)
Review
Physics, Multidisciplinary
Hameed Naser, Z. Hassan, Sabah M. Mohammad, Haider Mohammed Shanshool, Nabeel Z. Al-Hazeem
Summary: Laser ablation is a promising method for synthesizing nanomaterials and improving the surface plasmon resonance of gold-silver alloy nanomaterials. The parameters and ambient factors can affect the formation and SPR of these materials. Adjusting the gas pressure in the atmosphere is the simplest way to change the SPR.
BRAZILIAN JOURNAL OF PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Aminu Muhammad, Sabah M. Mohammad, Zainuriah Hassan, Suvindraj Rajamanickam, Shireen Mohammed Abed, M. G. B. Ashiq
Summary: The purpose of this study is to enhance the electrical and optical properties of zinc oxide (ZnO) by doping it with silver (Ag) and fluorine (F). F and Ag co-doped ZnO nanorods were synthesized using a modified hydrothermal method, and an ultraviolet metal-semiconductor-metal photodetector (PD) was fabricated. The results showed that the co-doped sample had improved crystal quality, reduced defect density, decreased bandgap, and enhanced sensitivity and response times of the PD.
MICROELECTRONICS INTERNATIONAL
(2023)
Article
Engineering, Electrical & Electronic
Shireen Mohammed Abed, Sabah M. Mohammad, Zainuriah Hassan, Aminu Muhammad, Suvindraj Rajamanickam
Summary: This study fabricated a UV metal-semiconductor-metal (MSM) photodetector based on zinc oxide nanorods (ZnO NRs) grown on seeded silicon substrate using a low-cost drop-casting technique. The performance of the fabricated MSM devices was investigated and discussed. The fabricated ZnO NRs UV photodetector showed high stability, photocurrent, sensitivity, and responsivity under 365 nm wavelength illumination and various applied bias.
MICROELECTRONICS INTERNATIONAL
(2023)
Article
Materials Science, Multidisciplinary
Puteri Haslinda Megat Abdul Hedei, Zainuriah Hassan, Hock Jin Quah
Summary: Different annealing temperatures were used to investigate the effects on structural, morphological, optical, and electrical characteristics of RF magnetron sputtered gallium oxide (Ga2O3) films. The phase of the film transformed from g-Ga2O3 to mixed phases of cubic and monoclinic I3-Ga2O3 with increasing temperature, and fully converted to I3-Ga2O3 at 1000°C. Oxygen vacancies and interstitials were formed, creating deep energy levels in the band gap of the Ga2O3 film. The highest current density was observed in the film annealed at 400°C, attributed to the highest density of dislocation and oxygen vacancies in the film. However, a thicker interfacial layer and the location of oxygen vacancies at 1000°C annealing caused a slight increase in current density compared to 800°C at gate voltages greater than 15V.
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T
(2023)
Article
Materials Science, Multidisciplinary
M. Z. Mohd Yusoff, A. Mahyuddin, Z. Hassan, M. S. Yahya
Summary: The study investigates the influence of high thermal annealing on the surface morphological, structural, and optical properties of ZnO/AlN/GaN/AlN layers grown on Si substrate by MBE. ZnO thin film was deposited on AlN/GaN/AlN heterostructures using RF sputtering machine. Thermal annealing at different temperatures (600 degrees C and 800 degrees C) with nitrogen flow was applied to the samples in a vacuum tube furnace. Surface morphological, structural, and optical properties were characterized using FESEM, AFM, HR-XRD, and Raman spectroscopy. The optimal thermal annealing temperature was found to be 600 degrees C, resulting in the lowest dislocation density in the films based on the optical and structural evaluation.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2023)
Article
Chemistry, Physical
A. K. Tan, N. A. Hamzah, M. A. Ahmad, S. S. Ng, Z. Hassan
Summary: In this study, InGaN/GaN heterostructures were grown on a flat sapphire substrate using MOCVD technique. Results showed that a higher V/III ratio led to parasitic behavior by hydrogen dissociated from ammonia, which etched the InN and changed the growth morphology. Moreover, the InGaN thin films grown at higher V/III ratios exhibited more stable bandgap energy and improved electrical properties. The correlation between strain and carrier density was also discussed, and it was concluded that high-quality and thick InGaN thin films could be grown for solar cell applications at higher V/III ratio conditions.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Engineering, Electrical & Electronic
Saad Milad, Ali Nsar, Zainuriah Hassan, Kuan Yew Cheong, Way Foong Lim, W. F. Lim
Summary: This study introduced the incorporation of CeO2 seed layer for the growth of CeO2 nanostructures using Pandanus amaryllifolius leaf extract as a stabilizing agent. Results showed that samples with CeO2 seed layer demonstrated lower leakage current density regardless of the presence of MEA. The improvement in leakage current density could be attributed to high oxygen composition and adequate oxygen vacancies, while a discrepancy was observed in samples with MEA and without CeO2 seed layer where the oxygen vacancies acted as hole traps degrading the J-V characteristic.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Physics, Multidisciplinary
Z. J. Kadhim, M. A. Mahdi
Summary: Silicon nanowires (SiNWs) were prepared via a two-step metal-assisted chemical etching (MACE) method using n-Si(100) for 15 and 30 minutes. The morphology, structure, and optical properties of the SiNWs were studied using SEM, XRD, and UV-vis absorption. A photoelectrochemical cell (PEC) was used to measure the properties of a photoanode device based on n-SiNWs for water splitting. The SiNWs prepared in 30 minutes exhibited a photocurrent density of 3.72 mA.cm(-2) and a photoconversion efficiency of 1.37% at 0.78 V.
Article
Green & Sustainable Science & Technology
Farah Hayati Ahmad, Zainuriah Hassan, Way Foong Lim
Summary: Post-deposition annealing of CeO2 thin films in nitrogen/oxygen/nitrogen ambient from 400 until 1000 degrees C successfully transformed the films from oxygen poor to oxygen-rich state. The increase of temperature has enhanced the adsorption and diffusion of nitrogen and oxygen, decreasing the attachment of nitrogen to the oxygen vacancies. The film annealed at 800 degrees C achieved the best performance with the lowest leakage current level.
SUSTAINABLE MATERIALS AND TECHNOLOGIES
(2023)
Article
Nanoscience & Nanotechnology
E. A. Kabaa, Z. Hassan, N. M. Ahmed
Summary: This study demonstrates the direct electrochemical deposition of ZnO nanotwins on ITO glass and investigates their structural and optical properties. The morphology of the ZnO nanotwins varies with current density, and the band gap decreases as carbon dots increase.
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY
(2022)
Article
Nanoscience & Nanotechnology
N. Kasim, Z. Hassan, W. F. Lim, H. J. Quah
Summary: This study compares the differences in the characteristics of ZnO, InZnO, GaZnO, and InGaZnO thin films prepared using the spin coating method. It investigates the contributions of In and Ga towards changes in the physical properties and analyzes the surface distribution of grains using FESEM and AFM. Additionally, the study discusses the optical band gap and elemental atomic percentage of the thin films.
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY
(2022)
Article
Nanoscience & Nanotechnology
Khai Shenn Lau, Zainuriah Hassan, Way Foong Lim, Hock Jin Quah
Summary: A cerium doped yttrium aluminium garnet (YAG:Ce) phosphor was synthesized using facile mixed-fuel microwave solution combustion synthesis (MSCS) and subjected to a post-annealing treatment. The annealed powder exhibited improved crystallinity, crystallite size, and spherical-like nano-particles morphology. The phosphor showed a broad yellow emission centred at 534 nm, with increased emission intensity after annealing treatment. Electroluminescence (EL) measurement of the phosphors in a white light emitting diode (WLED) provided characterization of the color properties.
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY
(2022)
