T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers

Published 2009 View Full Article

Authors

Keywords

Journal

SUPERLATTICES AND MICROSTRUCTURES

Volume 45, Issue 3, Pages 105-116

Publisher

Elsevier BV

Online

2009-01-22

DOI

10.1016/j.spmi.2008.12.032

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SUPERLATTICES AND MICROSTRUCTURES

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Reagent

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