Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Published 2010 View Full Article

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Title
Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors
Authors
Keywords
-
Journal
SOLID-STATE ELECTRONICS
Volume 56, Issue 1, Pages 95-99
Publisher
Elsevier BV
Online
2010-11-12
DOI
10.1016/j.sse.2010.10.016

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