Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates

Title
Strain relaxation mechanisms in compositionally uniform and step-graded SiGe films grown on Si(110) substrates
Authors
Keywords
-
Journal
SOLID-STATE ELECTRONICS
Volume 53, Issue 10, Pages 1135-1143
Publisher
Elsevier BV
Online
2009-06-22
DOI
10.1016/j.sse.2009.05.010

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