Journal
SOLID-STATE ELECTRONICS
Volume 52, Issue 11, Pages 1815-1820Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2008.09.006
Keywords
Accumulation-mode; Silicon-on-insulator; Multigate MOSFET
Funding
- Science Foundation Ireland Grant [05/IN/1888]
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The performances of accumulation-mode and inversion-mode multigate FETs are compared. The influence of gate underlap on the electrical properties is analyzed. Both simulation results and experimental data show that in a device with gate underlap, accumulation-mode devices have a higher current drive, lower source and drain resistance and less process variability than inversion-mode FETs. (C) 2008 Elsevier Ltd. All rights reserved.
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