Journal
SOLID-STATE ELECTRONICS
Volume 52, Issue 9, Pages 1452-1459Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2008.04.032
Keywords
silicon nanocrystals; Flash memory; NOR
Funding
- EREVNA
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in this paper, silicon nanocrystals (Si-NCs) fabricated by Chemical Vapor Deposition (CVD) are successfully integrated in a 32 Mb ATMEL NOR Flash memory product, processed in a 130 nm technology platform. Different Si-NC deposition conditions are explored and the threshold voltage distributions of the arrays are correlated to the Si-NC size/dispersion. Main reliability characteristics, as endurance and data-retention after cycling, are studied. Results obtained on large arrays are related to single cell characteristics. The large set of data measured oil arrays clearly demonstrates the robustness of our process and integration scheme. (C) 2008 Published by Elsevier Ltd.
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