Journal
SOLID STATE COMMUNICATIONS
Volume 151, Issue 22, Pages 1650-1653Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2011.08.010
Keywords
ZnO nanowires; Field emission; In situ measurement
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Funding
- National Natural Science Foundation of China (NSFC) [50902004, 11023003]
- China's Ministry of Science and Technology [2007CB936202, 2009CB623703]
- Research Fund for the Doctoral Program of Higher Education
- International Science and Technology Cooperation Program of China
- Sino-Swiss Science and Technology Cooperation Program [2010DFA01810]
- EU [247641]
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2D planar field emission devices based on individual ZnO nanowires were achieved on Si/SiO2 substrate via a standard e-beam lithography method. The anode, cathode and ZnO nanowires were on the same substrate; so the electron field emission is changed to 2D. Using e-beam lithography, the emitter (cathode) to anode distance could be precisely controlled. Real time, in situ observation of the planar field emission was realized in a scanning electron microscope. For individual ZnO nanowires, an onset voltage of 200 V was obtained at 1 nA. This innovative approach provides a viable and practical methodology to directly implement into the integrated field emission electrical devices for achieving on-chip fabrication. (C) 2011 Elsevier Ltd. All rights reserved.
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