Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes

Published 2010 View Full Article

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Title
Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes
Authors
Keywords
-
Journal
SOLID STATE COMMUNICATIONS
Volume 150, Issue 15-16, Pages 734-738
Publisher
Elsevier BV
Online
2010-01-27
DOI
10.1016/j.ssc.2010.01.030

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