Journal
SOLID STATE COMMUNICATIONS
Volume 150, Issue 35-36, Pages 1686-1689Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2010.06.022
Keywords
Chalcopyrites; Semiconductor; Raman spectroscopy
Categories
Funding
- Army Grant [W911NF-08-1-0523]
- Minority lead program [FISK 09-S567-0010-02-C2]
- NSF, Center of Research Excellence in Science and Technology (CREST) [CA-0420516]
- Direct For Mathematical & Physical Scien
- Division Of Astronomical Sciences [GRANTS:13729195] Funding Source: National Science Foundation
- Division Of Astronomical Sciences
- Direct For Mathematical & Physical Scien [0849736] Funding Source: National Science Foundation
- Division Of Human Resource Development
- Direct For Education and Human Resources [0930018, GRANTS:13678546] Funding Source: National Science Foundation
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AgGaSe2, AgGa0.9In0.1Se2, and AgGa0.8In0.2Se2 single crystals grown by the horizontal Bridgman technique were studied utilizing Raman spectroscopy excited with 633- and 784-nm lasers at temperatures varied from 77 to 300 K. The resonant Raman scattering associated with a transition from the Gamma(6)(B) of the valence band to the conduction band Gamma(6) of AgGa(0.9)In(0.1)Se(2)crystal is demonstrated. Resonant enhancements of the longitudinal optical (LO) polar modes of Gamma(5) (or E) including Gamma(5L)(W-4), Gamma(5L)(W-3), Gamma(5L)(X-5), and Gamma(5L), (Gamma(15)), and their overtones and combinations in the crystal at 77 K were observed. (C) 2010 Elsevier Ltd. All rights reserved.
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