Journal
SOLID STATE COMMUNICATIONS
Volume 149, Issue 45-46, Pages 2078-2081Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2009.08.015
Keywords
Quantum wells; Semiconductors; Spin dynamics; Spin-orbit effects
Categories
Funding
- National Natural Science Foundation of China [10725417]
- National Basic Research Program of China [2006CB922005]
- Chinese Academy of Sciences
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A spin relaxation mechanism is proposed based on a second-order spin-flip intersubband spin-orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is shown that this mechanism is important in symmetric GaAs (110) quantum wells with high impurity density. The dependencies of the spin relaxation time on electron density, temperature and well width are studied with the underlying physics analyzed. (C) 2009 Elsevier Ltd. All rights reserved.
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