A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b:4,5-b ′]diselenophene/fullerene double layer

Published 2007 View Full Article

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Title
A high mobility ambipolar field effect transistor using a 2,6-diphenylbenzo[1,2-b:4,5-b ′]diselenophene/fullerene double layer
Authors
Keywords
-
Journal
SOLID STATE COMMUNICATIONS
Volume 145, Issue 3, Pages 114-117
Publisher
Elsevier BV
Online
2007-11-08
DOI
10.1016/j.ssc.2007.10.017

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