Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 101, Issue -, Pages 123-130Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2012.02.027
Keywords
Solar grade silicon; Minority-carrier lifetime; Internal gettering; Phosphorus gettering; Release/diffusion model; Segregation model
Funding
- Danish PSO-FU [6389]
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The minority-carrier lifetime in p-type solar-grade silicon (SoG-Si) produced by Elkem Solar was investigated after different types of heat treatment. Two groups of samples differing by the as-grown lifetimes were exposed to internal and phosphorus gettering using constant and variable temperature processes. Optimal heat-treatment parameters for each group of samples were then identified which improved the minority-carrier lifetimes to values higher than the minimum value needed for solar cells. Phosphorus gettering using a variable temperature process enhanced in particular the lifetime within each group, increasing in certain cases the lifetime from 3 up to 81 mu s. (C) 2012 Elsevier B.V. All rights reserved.
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