4.7 Article

Boron-doped zinc oxide layers grown by metal-organic CVD for silicon heterojunction solar cells applications

Journal

SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 95, Issue 4, Pages 1057-1061

Publisher

ELSEVIER
DOI: 10.1016/j.solmat.2010.11.013

Keywords

Heterojunction; Solar cells; Transparent conducting oxide; ZnO:B; MOCVD

Funding

  1. French national Industrial agency (OSEO/ANVAR)
  2. European Community [211821]
  3. Nano-Characterization Platform of Minatec

Ask authors/readers for more resources

In this work, we focus on ZnO:B layers as an alternative TCO for application on a-Si:H/c-Si heterojunction solar cells. First, the optimization of the material has been done in terms of optical and electrical properties. We have also studied the behaviour of ZnO:B against ageing. Finally, complete heterojunction solar cells have been fabricated with different back-side TCO configurations to understand the ageing mechanisms and to deeply study the influence of degradation on the solar cells parameters. Stable efficiencies up to 16.6% on polished n-type c-Si were obtained on 25 cm(2) heterojunction solar cells fabricated at low temperatures. (C) 2010 Elsevier B.V. All rights reserved.

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