Investigating the electronic properties of Al2O3/Cu(In,Ga)Se2 interface

Alkali-Templated Surface Nanopatterning of Chalcogenide Thin Films: A Novel Approach Toward Solar Cells with Enhanced Efficiency

(2015) Patrick Reinhard et al.   NANO LETTERS

Influence of Ga/(Ga + In) grading on deep-defect states of Cu(In,Ga)Se2solar cells

(2015) Ratan Kotipalli et al.   Physica Status Solidi-Rapid Research Letters

On the assessment of CIGS surface passivation by photoluminescence

(2015) Jonathan Joel et al.   Physica Status Solidi-Rapid Research Letters

Properties of Cu(In,Ga)Se2solar cells with new record efficiencies up to 21.7%

(2014) Philip Jackson et al.   Physica Status Solidi-Rapid Research Letters

Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2solar cells

(2014) Bart Vermang et al.   PROGRESS IN PHOTOVOLTAICS

Introduction of Si PERC Rear Contacting Design to Boost Efficiency of Cu(In,Ga)Se $_{\bf 2}$ Solar Cells

(2014) Bart Vermang et al.   IEEE Journal of Photovoltaics

Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells

(2013) Adrian Chirilă et al.   NATURE MATERIALS

Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2O3

(2012) W.-W. Hsu et al.   APPLIED PHYSICS LETTERS

Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As

(2012) G. W. Paterson et al.   JOURNAL OF APPLIED PHYSICS

Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

(2012) G. Dingemans et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices

(2011) Yu Yuan et al.   IEEE ELECTRON DEVICE LETTERS

A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ and InP Capacitors

(2011) Guy Brammertz et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES