Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 93, Issue 6-7, Pages 1056-1061Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2008.11.048
Keywords
Amorphous silicon carbide; VHF-PECVD; Monomethyl silane; Solar cell; Light stability
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Preparation of intrinsic hydrogenated amorphous silicon carbide (i-a-SiC:H) thin films for use as a top cell of triple junction solar cells is presented. These films were deposited using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with monomethyl silane (MMS) gas as the carbon source. Deposition conditions were explored to obtain films with a wide gap and low defect density. It was confirmed that the hydrogen dilution ratio plays an important role in enhancing the film properties. Employing a-SiC:H film as an intrinsic layer of single junction cell, open-circuit voltage as high as 0.99V has been achieved. (C) 2008 Elsevier B.V. All rights reserved.
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