Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 93, Issue 6-7, Pages 1000-1003Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2008.11.028
Keywords
(In,Ga)(2)Se-3 precursor; CIGS; Preferred orientation; RMS roughness; Raman
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(In,Ga)(2)Se-3 thin films were deposited on Mo-coated glass substrates by a conventional MBE system. To control the preferred orientation of Cu(In,Ga)Se-2 (CIGS) layers, the deposition temperature dependence T-depo of the (In,Ga)(2)Se-3 layer was investigated including observations of both surface morphology and cross-sectional structure, Raman scattering and preferred orientation in the range 50-500 degrees C. gamma-phase (In,Ga)(2)Se-3 films exhibited (1 1 0) and (3 0 0) X-ray diffraction lines with a little or no (0 0 6) line contribution for T-depo>300 degrees C. It was revealed that a (3 0 0) preferred orientation of the (In,Ga)(2)Se-3 layer could promote a (2 2 0/2 0 4) orientation of subsequently grown GIGS films, which were obtained only at the moderate temperatures of 300-400 degrees C during (In,Ga)(2)Se-3 deposition. (C) 2008 Elsevier B.V. All rights reserved.
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