Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 92, Issue 11, Pages 1336-1340Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2008.05.006
Keywords
GaAs; solar cells; point defects; radiation effects
Funding
- National Academy of Sciences of Ukraine [VC-138]
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The results of experimental study of radiation resistance of GaAs-based solar cells are presented. The solar cells were irradiated by 1 MeV electrons at room temperature with the fluence up to 4 x 1016 electrons cm(-2). The radiation influence on the dark current and short-circuit current under illumination was investigated both experimentally and theoretically. It is shown that the radiation-produced electron traps E5 and hole traps HI are responsible for irradiation-induced degradation of such solar cells. The radiation tolerance of the basic parameters (the short-circuit current, the output power) of GaAs solar cells is primarily determined by the radiation damage in p-regions. (C) 2008 Elsevier B.V. All rights reserved.
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