Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 140, Issue 1, Pages 134-138Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2009.03.053
Keywords
ZnO; Semiconductor; Heterojunction; Moisture sensor
Funding
- IIT, Kharagpur as an institute scholar
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A p-ZnO/n-Si thin film heterojunction is fabricated on an n-type Si substrate by pulsed laser deposition (PLD). The crystallinity of the junction materials and surface morphology are examined by an X-ray diffractometer (XRD), scanning electron microscope (SEM) and cross-sectional transmission electron microscope (TEM). The current-voltage (I-V) characteristics of the p-n heterostructure show nonlinear diode like behavior. Zinc oxide doped with urea as nitrogen source shows p-type conductivity, which is further confirmed by its moisture sensing ability. The moisture sensitivity of the heterostructure shows the increase of resistance due to decrease of hole concentration and thus reveals the p-type conductivity of nitrogen doped ZnO film. Nitrogen doped p-ZnO/n-Si thin film heterojunction shows almost linear variation of resistance with relative humidity (RH) in the range 30-97% with a response and recovery time of 12 s and 36 s respectively at normal atmospheric temperature and pressure. (C) 2009 Published by Elsevier B.V.
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