High-temperature piezoresistive pressure sensor based on implantation of oxygen into silicon wafer

Title
High-temperature piezoresistive pressure sensor based on implantation of oxygen into silicon wafer
Authors
Keywords
-
Journal
SENSORS AND ACTUATORS A-PHYSICAL
Volume 179, Issue -, Pages 277-282
Publisher
Elsevier BV
Online
2012-03-29
DOI
10.1016/j.sna.2012.03.027

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