Article
Nanoscience & Nanotechnology
Hyun Kyu Seo, Jin Joo Ryu, Su Yeon Lee, Kanghyoek Jeon, Hyunchul Sohn, Gun Hwan Kim, Min Kyu Yang
Summary: Novel computing systems are required to process unstructured data with low power and parallel processing, similar to the functionality of the human brain. Research has focused on resistive switching devices and crossbar arrays to mimic the functioning of the human brain in electronic devices. This study highlights improvements in the reliability characteristics of a self-rectifying resistive switching cell and the importance of asymmetric electrodes and linear conductance update for inference performance.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Physics, Applied
Xingchen Zhang, Yihang Guo, Guo Tian, Zhiqing Song, Chao Chen, Wenda Yang, Zhipeng Hou, Deyang Chen, Zhen Fan, Guofu Zhou, Jun-Ming Liu, Xingsen Gao
Summary: Researchers have fabricated an ordered BiFeO3 nanoisland array on a SrTiO3 substrate using a mask-assisted pulsed laser deposition method, which exhibits exotic topological domains. These center-type quad-domain structures have high stability and can be switched and recovered by applying external electric fields，providing a suitable platform for further exploration of the topological phase transition properties, new functions, and potential applications of BiFeO3 nanoislands.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Nanoscience & Nanotechnology
Dongfang Chen, Xiaojun Tan, Bowen Shen, Jun Jiang
Summary: By carefully selecting an electrode that can suppress the interfacial barrier modulation induced by polarization reversal, the conductivity of charged domain walls (CDWs) in thin films can be accurately measured. This is important for the development of high-density ferro-resistive memory.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Materials Science, Multidisciplinary
Min Ju Yun, Doowon Lee, Sungho Kim, Christian Wenger, Hee-Dong Kim
Summary: This study reports the formation of free/self-rectifying resistive switching characteristics in a crystalline HfO2-based resistive switching memory device, which exhibits resistive switching behaviors without the need for a forming process. Additionally, the resistive switching performance is improved when using a top electrode with a lower work function.
MATERIALS CHARACTERIZATION
(2021)
Review
Chemistry, Multidisciplinary
Xianyue Zhao, Stephan Menzel, Ilia Polian, Heidemarie Schmidt, Nan Du
Summary: This review comprehensively examines the state-of-the-art research on resistive switching (RS) in BiFeO3 (BFO)-based memristive devices. It discusses the fabrication techniques for preparing functional BFO layers, analyzes the lattice systems and crystal types responsible for RS behaviors, and reviews the underlying physical mechanisms and effects influencing RS in BFO-based memristive devices. Furthermore, the review explores the applications of BFO devices, evaluates energy consumption in RS, and discusses potential optimization techniques for memristive devices.
Article
Materials Science, Ceramics
Yoon Hyung Keum, Jong Yeog Son
Summary: We investigated the ferroelectric switching dynamics, as well as the multiferroic and piezoelectric properties of highly a-oriented epitaxial Bi5Ti3FeO15 (BTFO) thin films on Nb-doped SrTiO3 single crystal substrates. The highly a-oriented epitaxial BTFO thin films exhibited the best ferroelectric properties, while the highly c-oriented epitaxial BTFO thin films exhibited the best ferromagnetic properties. Particularly, the BTFO thin films with a proper mix of a- and c-oriented crystallinity showed the best piezoelectric properties.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2023)
Article
Materials Science, Ceramics
Yuanyuan Wang, Hongbo Liu, Tingnan Yan, Jianwei Zhao, Shifeng Guo, Rong Sun, Zhilun Lu, Dawei Wang
Summary: In this study, Nb-doped 0.75SrTiO(3)-0.25BiFeO(3) (ST-BF) lead-free ceramics were designed and synthesized, and the effects of Nb doping on microstructure, dielectric, and electrical properties were investigated. It was found that Nb doping led to changes in crystal structure, grain size, and improved dielectric properties, with the 0.03 Nb-doped ST-BF composition exhibiting low dielectric loss and stable dielectric constant. Impedance spectroscopy analysis showed that Nb doping increased the total resistivity, forming an electrically conductive core and a nonconductive shell with enhanced activation energy.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2022)
Article
Computer Science, Information Systems
Dongjun Jang, Min-Woo Kwon
Summary: Resistive random-access memory (RRAM) has gained significant attention as a promising non-volatile memory technology, offering high operational performance, low power consumption, temperature robustness, and scalability. Two-dimensional nanostructured materials play a crucial role in RRAM devices, enhancing their electrical properties and physical attributes for overall device improvement.
Article
Physics, Multidisciplinary
Ying Yang, Yuelin Zhang, Liang Yang, Jingdi Lu, Gongxun Deng, Yinshu Wang, Hui Zhu, Aiji Wang
Summary: This study demonstrates the three-state resistive switching (RS) phenomenon on a Pt/BiFeO3/SrRuO3 structure. The three-state storage capability is attributed to the movement of oxygen vacancies and the trapping/detrapping of charge carriers at the interface. Additionally, a ternary OR logic gate is designed using only one memristor.
Article
Chemistry, Multidisciplinary
Tsz-Lung Ho, Keda Ding, Nikolay Lyapunov, Chun-Hung Suen, Lok-Wing Wong, Jiong Zhao, Ming Yang, Xiaoyuan Zhou, Ji-Yan Dai
Summary: This study reports on the multilevel resistive switching characteristics in SnSe/STO heterojunction-based memory devices, demonstrating reliable and stable bipolar resistive switching. By using different electrode conditions, multilevel state switching ability is achieved, providing a potential solution for the application of synaptic devices in neuromorphic computing.
Article
Materials Science, Ceramics
Yibo Deng, Xiaoguang Xu, Zedong Xu, Mengxi Wang, Qi Liu, Yingli Ma, Jikun Chen, Kangkang Meng, Yong Wu, Jun Miao, Yong Jiang
Summary: In this work, the resistive switching behavior of an amorphous La2Ti2O7 film sandwiched between two Pt electrodes is reported. The resistive switching is forming-free and highly uniform. The mechanism of switching behavior is attributed to trapping/detrapping-mediated electronic bipolar resistance switching.
CERAMICS INTERNATIONAL
(2022)
Article
Engineering, Electrical & Electronic
Arnab Hazra, Radha Bhardwaj
Summary: The resistive switching phenomenon was measured in an SrTiO3/TiO2 heterostructured nanotube array. The morphology and defect density of the nanotubes were significantly altered due to the growth of SrTiO3. The best-performing material was synthesized with a 2.5 mM precursor, exhibiting an ROFF/RON ratio of approximately 12, with excellent retention and endurance characteristics.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Shahid Iqbal, Mohit Kumar, Qadeer Akbar Sial, Le Thai Duy, Hyungtak Seo
Summary: Researchers have successfully simulated neural functions of the human brain by creating a thermally nanostructured cobalt oxide-based memristor, demonstrating the potential for artificial neuromorphic computing.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Lili Ding, Ye Ji, Xiaoyue Zhang, Mengjun Wu, Yue Zheng, Biao Wang, Weijin Chen
Summary: A new type of topological nanoisland domain texture has been discovered, with unique transport characteristics and rectifying behavior. These nanoislands exhibit exotic quad-domain textures, which show a higher conductance in the quad-domains compared to the cross-shaped buffer domains, indicating a correlation between local conductance and domain textures. This research sheds light on the potential applications of these domain textures in configurable electronic devices.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Ceramics
Dongjoo Bae, Doowon Lee, Jinsu Jung, Sungho Kim, Hee-Dong Kim
Summary: In this study, self-rectifying resistive switching property was observed in Ti/Zr3N2/p-Si and Ti/Zr2N/p-Si metal-insulator-semiconductor (MIS) capacitors, with the Zr3N2 film showing higher trap density and more stable performance.
CERAMICS INTERNATIONAL
(2021)
Article
Engineering, Electrical & Electronic
Yan Zhang, Dao Wang, Chunlai Luo, Jiayun Cheng, Siying Huo, Beijing Zhang, Ruiqiang Tao, Deyang Chen, Zhen Fan, Ji-Yan Dai, Xubing Lu, J-M Liu
Summary: We demonstrate a simple and efficient method to regulate the high coercive field (Ec) value of Hf0.5Zr0.5O2 (HZO) films through interface modification. By varying the ultraviolet-ozone (UV-O-3) irradiation time, we achieve well-controlled Ec values and maintain a relatively high 2P(r) level.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Materials Science, Multidisciplinary
S. H. Guan, Y. Yang, Z. Jin, T. T. Liu, Y. Liu, Z. P. Hou, D. Y. Chen, Z. Fan, M. Zeng, X. B. Lu, X. S. Gao, M. H. Qin, J-M Liu
Summary: In this work, a theoretical method to localize antiferromagnetic (AFM) structures is proposed, and the stability of the method as well as its dependence on injected current, defect size, and temperature is studied via numerical and theoretical simulations. The results demonstrate the effectiveness of this method in localizing skyrmions.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
(2022)
Article
Chemistry, Physical
Luyong Zhang, Guo Tian, Wenda Yang, Dongfeng Zheng, Chuanjie Lin, Jianbiao Xian, Yihang Guo, Xingchen Zhang, Xiuqin Qiu, Lanping Zhang, Zhen Fan, Deyang Chen, Zhipeng Hou, Minghui Qin, Jun-Ming Liu, Xingsen Gao
Summary: The precise patterning of nanoscopic domain structures in as-grown epitaxial PbTiO3 films can be achieved by introducing an ultrathin pre-patterned doping layer. This doping layer can effectively reverse the interfacial built-in bias, allowing for the transfer of the nano-patterns into the ferroelectric film's domain structure.
JOURNAL OF MATERIOMICS
(2023)
Article
Physics, Multidisciplinary
Kai-Hui Chen, Fan Zhen, Dong Shuai, Wen-Jie Li, Yi-Hong Chen, Tian Guo, De-Yang Chen, Ming-Hui Qin, Zeng Min, Xu-Bing Lu, Guo-Fu Zhou, Xing-Sen Gao, Jun-Ming Liu
Summary: SrFeOx (SFO) is a material that undergoes reversible phase transformation between SrFeO2.5 brownmillerite (BM) and SrFeO3 perovskite (PV) phases, leading to significant changes in physical properties without altering the lattice framework. In this study, a double-layer BM-SFO/PV-SFO memristor is designed to address the limitations of single-layer memristors, such as a small number of resistance states, large resistance fluctuation, and high nonlinearity. Experimental results show that the double-layer memristor exhibits good repeatability, small resistance fluctuation, and stable and gradual resistive switching behavior. It also demonstrates the potential for emulating synaptic behaviors and achieving improved recognition accuracy in neural network simulations.
ACTA PHYSICA SINICA
(2023)
Article
Chemistry, Multidisciplinary
Chao Chen, Deyang Chen, Peilian Li, Minghui Qin, Xubing Lu, Guofu Zhou, Xingsen Gao, Jun-Ming Liu
Summary: An approach to selectively control 71 degrees ferroelastic and 180 degrees ferroelectric switching paths in multiferroic BiFeO3 thin films with periodically ordered 71 degrees domain wall is reported. Four-state polarization states can be deterministically achieved and reversibly controlled through precisely selecting different switching paths. These studies reveal the ability to obtain multiple polarization states for the realization of multi-state memories and magnetoelectric coupling-based devices.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Physics, Applied
Wenjie Li, Zhen Fan, Qicheng Huang, Jingjing Rao, Boyuan Cui, Zhiwei Chen, Zhuosheng Lin, Xiaobing Yan, Guo Tian, Ruiqiang Tao, Deyang Chen, Minghui Qin, Min Zeng, Xubing Lu, Guofu Zhou, Xingsen Gao, Jun -Ming Liu
Summary: Ferroelectric second-order memristors can emulate synaptic behavior by exhibiting long-term conductance dynamics and polarization-controlled behavior. The correlation between conductance evolution and polarization dynamics is demonstrated, and the device is shown to faithfully emulate various synaptic functions. This study highlights the potential of the device as a building block for biorealistic neuromorphic systems.
PHYSICAL REVIEW APPLIED
(2023)
Article
Nanoscience & Nanotechnology
Lianliang Xiao, Zhigang Liu, Xindi Sun, Lingyu Zhang, Kaixin Liu, Fengyuan Zhang, Yantao Zheng, Shuhong Xie, Yao Wang
Summary: High power density capacitors have been in high demand for modern electronics and pulsed power systems. However, the challenge of achieving high power in capacitors has been restricted by the inverse relationship between breakdown strength and permittivity. By blending TrFE into the PVDF-HFP matrix, high performance dielectrics with composition-driven microstructures were achieved, leading to improved energy storage performance and high power density.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Nanoscience & Nanotechnology
Yongjian Luo, Zhen Wang, Yu Chen, Minghui Qin, Zhen Fan, Min Zeng, Guofu Zhou, Xubing Lu, Xingsen Gao, Deyang Chen, Jun-Ming Liu
Summary: Ferroelectrics with negative capacitance effects can amplify the gate voltage in field-effect transistors for low power operation. The tuning of negative capacitance effect in ferroelectric KNbO3 through strain engineering is demonstrated, where the voltage reduction and negative slope in polarization-electric field curves can be controlled by imposing various epitaxial strains. Adjusting the negative curvature region in the polarization-energy landscape under different strain states is responsible for the tunable negative capacitance. This work paves the way for fabricating low-power devices and reducing energy consumption in electronics.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Yuan Zhang, Yangchun Tan, Yangda Dong, Liyufeng Dai, Chuanlai Ren, Fengyuan Zhang, Lingping Zeng, Feng An, Changjian Li, Boyuan Huang, Gaokuo Zhong, Jiangyu Li
Summary: The Materials Genome Initiative aims to accelerate the discovery, development, manufacture, and deployment of advanced materials. This study introduces a high-throughput scanning second-harmonic-generation microscope that enables rapid screening and probing of polar materials. The technique is applied to investigate ferroelectrics and demonstrate its high-throughput capabilities using compositional-gradient and thickness-gradient films.
ADVANCED MATERIALS
(2023)
Article
Physics, Applied
Y. Liu, T. T. Liu, Z. P. Hou, D. Y. Chen, Z. Fan, M. Zeng, X. B. Lu, X. S. Gao, M. H. Qin, J. -m. Liu
Summary: In this work, a scheme to implement hybrid magnetic skyrmions (HMS) in ferrimagnets is proposed, and the dynamics of HMS driven by spin-orbit torque is studied. It is found that the skyrmion Hall effect can be modulated by tuning the Dzyaloshinskii-Moriya interaction and net angular momentum (d(s)). The Magnus force for finite d(s) enhances the longitudinal propagation and suppresses the transverse motion, resulting in faster dynamics and a decreased Hall angle compared to antiferromagnetic materials. Thus, suitable material selection can suppress the Hall effect and better control the HMS motion. Finally, a convenient skyrmion diversion scheme is proposed through modulating the helicity and Hall angle of the HMS, benefiting the future spintronic device design.
APPLIED PHYSICS LETTERS
(2023)
Article
Computer Science, Artificial Intelligence
Shuai Dong, Zhen Fan, Yihong Chen, Kaihui Chen, Minghui Qin, Min Zeng, Xubing Lu, Guofu Zhou, Xingsen Gao, Jun-Ming Liu
Summary: Nowadays, there is a need for efficient and lightweight semantic segmentation algorithms that can meet the high requirements of edge applications such as autonomous driving. This study proposes an extremely factorized network (EFNet) that achieves high accuracy with reduced model complexity. Additionally, a memristor-based CIM accelerator is designed to further improve the speed and energy efficiency of EFNet. The results show that the memristor-based CIM accelerator outperforms the GPU in terms of area, speed, and energy efficiency, making it a potential solution for deploying lightweight semantic segmentation models at the edge.
Article
Multidisciplinary Sciences
Zhiwei Chen, Wenjie Li, Zhen Fan, Shuai Dong, Yihong Chen, Minghui Qin, Min Zeng, Xubing Lu, Guofu Zhou, Xingsen Gao, Jun-Ming Liu
Summary: This article presents an experimental demonstration of an all-ferroelectric reservoir computing system, where the reservoir and readout network are implemented with volatile and nonvolatile ferroelectric diodes respectively. The system shows high accuracies and low power consumptions in various temporal tasks.
NATURE COMMUNICATIONS
(2023)
Article
Physics, Applied
Yongjian Luo, Changan Wang, Chao Chen, Yuan Gao, Fei Sun, Caiwen Li, Xiaozhe Yin, Chunlai Luo, Ulrich Kentsch, Xiangbin Cai, Mei Bai, Zhen Fan, Minghui Qin, Min Zeng, Jiyan Dai, Guofu Zhou, Xubing Lu, Xiaojie Lou, Shengqiang Zhou, Xingsen Gao, Deyang Chen, Jun-Ming Liu
Summary: In order to enhance energy storage density, both maximum polarization (P-max) and breakdown strength (E-b) need to be improved, even though they are inversely correlated. This study achieved order-disorder transition induced polar nanoregions in PbZrO3 thin films through low-energy ion implantation, overcoming the tradeoff between high polarizability and breakdown strength. This resulted in a tripling of the energy storage density from 20.5 to 62.3 J/cm(3) and a significant enhancement of breakdown strength. This approach can be extended to other dielectric oxides to improve energy storage performance and tailor oxide functionalities.
APPLIED PHYSICS REVIEWS
(2023)
Article
Physics, Applied
Guo Tian, Xin Yi, Zhiqing Song, Wenda Yang, Jianbiao Xian, Jun Jin, Shuai Ning, Zhipeng Hou, Deyang Chen, Zhen Fan, Minghui Qin, Guofu Zhou, Jiyan Dai, Xingsen Gao, Jun-Ming Liu
Summary: Highly ordered quad-domain ferroelectric polarization configurations were achieved in BiFeO3 nanoisland arrays by using substrate patterning to create nucleation sites. The quad-domain can be reversibly switched between the center divergent state with highly conductive domain walls and the center convergent state with insulating domain walls, resulting in a large resistance change. This templated growth strategy enables the controllable fabrication of exotic topological domains and sheds light on their applications for configurable electronic devices.
APPLIED PHYSICS REVIEWS
(2023)
Article
Chemistry, Physical
Xingchen Zhang, Hongying Chen, Guo Tian, Wenda Yang, Zhen Fan, Zhipeng Hou, Deyang Chen, Min Zeng, Minghui Qin, Jinwei Gao, Xingsen Gao, Jun -Ming Liu
Summary: We have successfully achieved controllable creation and erasure of polar bubble states in PbTiO3 (PTO) multilayers triggered by mechanical stress and light illumination. Applying AFM tip force induced the formation of nanoscale bubble domains from the initial monodomain state, while ultraviolet or infrared light illumination eliminated the created bubble domains. These results can be explained by the modulation of depolarization screening charges and bias fields, and provide a good example for the multi-field manipulation of polar topologies.
JOURNAL OF MATERIOMICS
(2023)
