4.6 Review

An Integrated ISFET Sensor Array

Journal

SENSORS
Volume 9, Issue 11, Pages 8831-8851

Publisher

MOLECULAR DIVERSITY PRESERVATION INTERNATIONAL-MDPI
DOI: 10.3390/s91108831

Keywords

ISFET; biosensor array; source-drain follower; CMOS biotechnology

Funding

  1. Ministry of Education, Culture, Sports, Science and Technology of Japan [17206037, 20226009]
  2. Development of Systems and Technology for Advanced Measurement and Analysis from the Japan Science and Technology Agency (JST)
  3. Grants-in-Aid for Scientific Research [17206037, 20226009] Funding Source: KAKEN

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A monolithically integrated ISFET sensor array and interface circuit are described. A new high-density, low-power source-drain follower was developed for the sensor array. ISFETs were formed by depositing Au/Ti extended-gate electrodes on standard MOSFETs, then thin silicon nitride layers using catalytic chemical vapor deposition and/or SU-8 protective layers were formed on the extended-gate electrodes. Applications for the array include: (1) pH detection by statistical distribution observing time and space fluctuations; (2) DNA detection using thiol-modified or silane-coupled oligonucleotides; (3) bio-image sensing by converting photons to electrons using Photosystem I of Thermosynechococcus elongatus, and sensing the converted electric charges by ISFETs.

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