Journal
SCIENTIFIC REPORTS
Volume 5, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep08448
Keywords
-
Categories
Funding
- State Key Program for Basic Research [2014CB921102, 2012CB932304]
- NSFC [U1232210]
- Funding of Jiangsu Innovation Program for Graduate Education, P. R. China [KYZZ0024]
- Wuhan National High Magnetic Field Center
- Hefei High Magnetic Field Laboratory, Chinese Academy of Science
Ask authors/readers for more resources
Inducing robust magnetic moments on the basal plane of the graphene sheet is very difficult, and is one of the greatest challenges in the study of physical chemistry of graphene materials. Theoretical studies predicted that introduction of a kind of sp(3)-type defects formed by OH groups is an effective pathway to achieve this goal [Boukhvalov, D. W. & Katsnelson, M. I. ACS Nano 5, 2440-2446 (2011)]. Here we demonstrate that OH groups can efficiently induce robust magnetic moments on the basal plane of the graphene sheet. We show that the inducing efficiency can reach as high as 217 mu B per 1000 OHgroups. More interestingly, the magnetic moments are robust and can survive even at 900 degrees C. Our findings highlight the importance of OH group as an effective sp(3)-type candidate for inducing robust magnetic moments on the basal plane of the graphene sheet.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available