4.7 Article

Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires

Journal

SCIENTIFIC REPORTS
Volume 5, Issue -, Pages -

Publisher

NATURE PORTFOLIO
DOI: 10.1038/srep17080

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Funding

  1. Japan Society for the Promotion of Science (JSPS) [26246013, 25286058]
  2. Nanotechnology Platform Project (Nanotechnology Open Facilities in Osaka University) from the Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT) [F-14-OS-0010, S-14-OS-0007]
  3. Grants-in-Aid for Scientific Research [25286058, 26246013] Funding Source: KAKEN

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Reversible and drastic modulation of the transport properties in vanadium dioxide (VO2) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowed us to investigate behavior of revealed hydrogen intercalation and diffusion aspects with time and spatial evolutions in nanowires. These results show that air nanogaps can operate as an electrochemical reaction field, even in a gaseous atmosphere, and offer new directions to explore emerging functions for electronic and energy devices in oxides.

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