Current-Voltage Characteristics of ZnGa2Se4 Compound Polycrystals

Current-voltage characteristics of the In-ZnGa2Se4-In structure have been studied in the temperature range of 90-335 K. Based on the data calculated for the concentration of three trap types in ZnGa2Se4, the values N-t=1.4 x 10(13), 8.2 x 10(12), and 2.6 x 10(12) cm(-3) are obtained. The contact region transparency D-k*=10(-5), surface recombination velocity S-k=0.65 m/s, and carrier lifetime tau=1.5 x 10(-4) s were determined. It was found that the current transmission mechanism in electric fields weaker than 10(3) V/cm is caused by monopolar carrier injection.