Analysis of the phase diagrams of the CdS-CdSe-CdTe system

A technique for determining the depth of band gap sagging and the mechanism of this effect (related to the deformation potential, which may arise in the range of existence of mixed alloy systems) has been proposed based on analysis of the energy diagrams of II-VI semiconductor compounds. Choosing a proper composition of a binary or ternary system, one can increase its photosensitivity in a specified spectral range due to the band gap sagging.