Journal
SEMICONDUCTORS
Volume 44, Issue 6, Pages 794-800Publisher
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S1063782610060175
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The quantum efficiency of GaN LED structures has been studied at various temperatures and biases. It was found that an efficiency falloff is observed with increasing current density and, simultaneously, the tunnel component of the current through the LED grows and the quasi-Fermi levels reach the mobility edge in the InGaN active layer. It is shown that the internal quantum efficiency falloff with increasing current density is due to the carrier leakage from the quantum well as a result of tunnel transitions from its band-tail states to local defect-related energy levels within the energy gaps of the barrier layers.
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